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Growth and characterization of BaZnGa
N.H. Jo, Q. Lin, M.C. Nguyen, U.S. Kaluarachchi, W.R. Meier, , S.S. Downing, A.E. Böhmer, T. Kong, Y. SunShow More
Published in Taylor and Francis Ltd.
2017
Volume: 97
   
Issue: 35
Pages: 3317 - 3324
Abstract
We report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba–Zn–Ga system. Single crystals of BaZnGa can be grown out of excess Ba–Zn and adopt a tI36 structure type. There are three unique Ba sites and three M = Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Temperature-dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronic or magnetic phase transitions between 1.8 and 300 K. © 2017 Informa UK Limited, trading as Taylor & Francis Group.
About the journal
JournalData powered by TypesetPhilosophical Magazine
PublisherData powered by TypesetTaylor and Francis Ltd.
ISSN14786435