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Modeling the dynamics of switching in electrochemical metallization (ECM)-based memristors
Renjith Sasikumar,
Published in Institute of Electrical and Electronics Engineers Inc.
2020
Abstract
Electrochemical metallization (ECM)-based resistive switching devices with very small inter-electrode distances have recently been reported. These devices have very low switching voltages (sub-1V), fast switching times and low switching energies. Ab-initio simulations predict low device failure for these devices. In this work, we model the dynamic characteristics of ECM-based memristors (implemented in Verilog-A), with a focus on simulating the switching delays during SET and RESET processes and calculating the energy consumption during switching. We have compared the simulation results obtained using our model, with experimental data available in literature. © 2020 IEEE.
About the journal
Journal2020 5th IEEE International Conference on Emerging Electronics, ICEE 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.