Electrochemical metallization (ECM)-based resistive switching devices with very small inter-electrode distances have recently been reported. These devices have very low switching voltages (sub-1V), fast switching times and low switching energies. Ab-initio simulations predict low device failure for these devices. In this work, we model the dynamic characteristics of ECM-based memristors (implemented in Verilog-A), with a focus on simulating the switching delays during SET and RESET processes and calculating the energy consumption during switching. We have compared the simulation results obtained using our model, with experimental data available in literature. © 2020 IEEE.