Get all the updates for this publication
Articles
Multiscale model for phonon-assisted band-to-band tunneling in semiconductorsPublished in
2013
DOI: 10.1063/1.4790628
Volume: 113
Issue: 6
We present a TCAD (Technology Computer Aided Design) compatible multiscale model of phonon-assisted band-to-band tunneling in semiconductors, which incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the [100], [110], and [111] directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in tunnel FETs and in small geometry MOSFETs and FINFETs. © 2013 American Institute of Physics.
Publisher Copy Version
Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Multiscale model for phonon-assisted band-to-band tunneling in semiconductors. Journal of Applied Physics 113, 6 p064506 (2013)] and may be found at https://doi.org/10.1063/1.4790628.
About the journal
| Journal | Journal of Applied Physics |
|---|---|
| ISSN | 00218979 |
| Open Access | No |
Authors (1)
Arvind Ajoy- Modeling of electrochemical metallization-based transport in vertical transition metal dichalcogenide (TMD) memristors
- Modeling of Electrochemical Metallization-Based Two-Dimensional Material Memristors for Neuromorphic Applications
- Analysis of Electrostatic MEMS Using Energy-Charge Landscape
- Effective bandstructures from unfolding supercells with vacancies
