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Responsivity Enhancement of Metal-Insulator-Semiconductor Photodetectors on Silicon-on-Insulator Substrates by Plasmonic Nanoantennas
, O. Sorias, O. Eyal, V. Mikhelashvili, M. Orenstein, G. Eisenstein
Published in Institute of Electrical and Electronics Engineers Inc.
2017
Volume: 16
   
Issue: 5
Pages: 778 - 783
Abstract
We report metal-insulator-semiconductor photodetectors fabricated on a silicon-on-insulator substrate, exhibiting an enhanced responsivity in the near-infrared due to the incorporation of Au-nanoantennas at the optical input port. The optimal antenna design and the photoresponse enhancements have been calculated using detailed finite-difference time-domain simulations. These nanoantennas modify the propagation of the input optical signals. In this regime, strong plasmonic local field enhancements are observed. The maximum responsivity enhancement, 40%, was obtained at 780 nm; while at wavelengths shorter than 720 nm, the responsivity is reduced due to absorption losses in the Au-nanoantennas. © 2002-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Nanotechnology
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN1536125X
Open AccessNo