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Articles
Room Temperature-Processed TiO2 MIM Capacitors for DRAM ApplicationsPublished in Springer Science and Business Media Deutschland GmbH
2014
Pages: 37 - 39
We report the room temperature fabrication of Ta/TiO2/Ta metal–insulator-metal (MIM) capacitors (mainly, for DRAM applications). The fabricated devices show high capacitance density ($\sim$15 fF/$\mu$m2) and...
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About the journal
| Journal | Physics of Semiconductor Devices |
|---|---|
| Publisher | Springer Science and Business Media Deutschland GmbH |
| ISSN | 18635520 |
| Open Access | No |
Authors (1)
Revathy Padmanabhan- High-performance stacked TiO2-ZrO2 and Si-doped ZrO2 metal-insulator-metal capacitors
- Multi-functional optically sensitive metal-insulator-semiconductor devices based on Pt nanoparticles fabricated in-situ with a dielectric stack using atomic layer deposition
- High-density metal-insulator-metal capacitors using Gd2O 3-based dielectrics
- Dynamical properties of optically sensitive metal-insulator-semiconductor nonvolatile memories based on Pt Nanoparticles
