Department of Physics

Indian Institute of Technology Palakkad&nbsp;(IIT Palakkad or IIT PKD) is a public autonomous&nbsp;engineering&nbsp;and&nbsp;research&nbsp;institute located in&nbsp;Palakkad,&nbsp;Kerala. It was&nbsp;one of the five new&nbsp;IITs&nbsp;proposed in the&nbsp;2014 Union budget of India. The campus was inaugurated on 3 August 2015. The institute has 94 faculty, 978 students, and 63 non-teaching staffs.

IT Palakkad currently offers four-year Bachelor of Technology (B.Tech) and two years MS programmes in 8 different engineering disciplines including&nbsp;Computer Science, Electrical, Mechanical, Civil among others.

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IIT Palakkad

Advances in large-area graphene synthesis via chemical vapour deposition on metals like copper were instrumental in the demonstration of graphene-based novel, wafer-scale electronic circuits and proof-of-concept applications such as flexible touch panels. Here, we show that graphene grown by chemical vapour deposition on copper is equally promising for spintronics applications. In contrast to natural graphene, our experiments demonstrate that chemically synthesized graphene has a strong spin-orbit coupling as high as 20â ‰meV giving rise to a giant spin Hall effect. The exceptionally large spin Hall angle ∼0.2 provides an important step towards graphene-based spintronics devices within existing complementary metal-oxide-semiconductor technology. Our microscopic model shows that unavoidable residual copper adatom clusters act as local spin-orbit scatterers and, in the resonant scattering limit, induce transverse spin currents with enhanced skew-scattering contribution. Our findings are confirmed independently by introducing metallic adatoms-copper, silver and gold on exfoliated graphene samples. © 2014 Macmillan Publishers Limited.

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Nature Communications

Giant spin Hall effect in graphene grown by chemical vapour deposition

Zero-order ultrasensitivity (ZOU) is a long known and interesting phenomenon in enzyme networks. Here, a substrate is reversibly modified by two antagonistic enzymes (a 'push-pull' system) and the fraction in modified state undergoes a sharp switching from near-zero to near-unity at a critical value of the ratio of the enzyme concentrations, under saturation conditions. ZOU and its extensions have been studied for several decades now, ever since the seminal paper of Goldbeter and Koshland (1981); however, a complete probabilistic treatment, important for the study of fluctuations in finite populations, is still lacking. In this paper, we study ZOU using a modular approach, akin to the total quasi-steady state approximation (tQSSA). This approach leads to a set of Fokker-Planck (drift-diffusion) equations for the probability distributions of the intermediate enzyme-bound complexes, as well as the modified/unmodified fractions of substrate molecules. We obtain explicit expressions for various average fractions and their fluctuations in the linear noise approximation (LNA). The emergence of a 'critical point' for the switching transition is rigorously established. New analytical results are derived for the average and variance of the fractional substrate concentration in various chemical states in the near-critical regime. For the total fraction in the modified state, the variance is shown to be a maximum near the critical point and decays algebraically away from it, similar to a second-order phase transition. The new analytical results are compared with existing ones as well as detailed numerical simulations using a Gillespie algorithm. © 2013 Elsevier Ltd.

Journal of Theoretical Biology

Zero-order ultrasensitivity: A study of criticality and fluctuations under the total quasi-steady state approximation in the linear noise regime

Corrigendum to Zero-order ultrasensitivity: A study of criticality and fluctuations under the total quasi-steady state approximation in the linear noise regime [J. Theor. Biol. 344 (2014) 1-11]

Erratum to "Zero-order ultrasensitivity: A study of criticality and fluctuations under the total quasi-steady state approximation in the linear noise regime" [J. Theor. Biol. 344 (2014) 1-11]

By modifying the tetrahedrality (the strength of the three body interactions) in the well-known Stillinger-Weber model for silicon, we study the diffusivity of a series of model liquids as a function of tetrahedrality and temperature at fixed pressure. Previous work has shown that at constant temperature, the diffusivity exhibits a maximum as a function of tetrahedrality, which we refer to as the diffusivity anomaly, in analogy with the well-known anomaly in water upon variation of pressure at constant temperature. We explore to what extent the structural and thermodynamic changes accompanying changes in the interaction potential can help rationalize the diffusivity anomaly, by employing the Rosenfeld relation between diffusivity and the excess entropy (over the ideal gas reference value), and the pair correlation entropy, which provides an approximation to the excess entropy in terms of the pair correlation function. We find that in the modified Stillinger-Weber liquids, the Rosenfeld relation works well above the melting temperatures but exhibits deviations below, with the deviations becoming smaller for smaller tetrahedrality. Further we find that both the excess entropy and the pair correlation entropy at constant temperature go through maxima as a function of the tetrahedrality, thus demonstrating the close relationship between structural, thermodynamic, and dynamical anomalies in the modified Stillinger-Weber liquids. © 2014 AIP Publishing LLC.

Journal of Chemical Physics

Diffusivity anomaly in modified Stillinger-Weber liquids

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this Letter, we study the surface morphology of 2D BN, gallium selenide (GaSe), and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis shows that these crystals have improved surface roughness (root mean square value of only ∼0.1nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility (μ) on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (μ∼ 38000 cm2/V s at room temperature), followed by G/MoS 2 (μ∼ 10000 cm2/V s) and G/GaSe (μ∼ 2200 cm2/V s). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate. © 2014 AIP Publishing LLC.

Applied Physics Letters

Electronic transport in graphene-based heterostructures

APS March Meeting Abstracts 2014, A4.

Influence of non-magnetic dilution in honeycomb-lattice iridates A2IrO3 (A=Na,Li)

We consider the one-dimensional XX model in a quasiperiodic transverse field described by the Harper potential, which is equivalent to a tight-binding model of spinless fermions with a quasiperiodic chemical potential. For weak transverse field (chemical potential), h<hc, the excitations (fermions) are delocalized, but become localized for h>hc. We study the nonequilibrium relaxation of the system by applying two protocols: a sudden change of h (quench dynamics) and a slow change of h in time (adiabatic dynamics). For a quench into the delocalized (localized) phase, the entanglement entropy grows linearly (saturates) and the order parameter decreases exponentially (has a finite limiting value). For a critical quench the entropy increases algebraically with time, whereas the order parameter decreases with a stretched exponential. The density of defects after an adiabatic field change through the critical point is shown to scale with a power of the rate of field change and a scaling relation for the exponent is derived. © 2014 American Physical Society.